• Junctionless Fet
• Junctionless Tunnel Fet
• Junctionless Tunnel Fet

Hai everyone.This is a review journal video entitled Junctionless Poly-Si Nanowire Field Effect Transistor(FET) with Gated Raised S/D.In this paper, the aut. We propose the concept of the electrical junction in a junctionless (JL) field-effect-transistor (FET) to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW) junctionless poly-Si thin-film transistors are used to demonstrate this conception of the electrical junction. Though the dopant and the dosage of the source, of the drain, and of the channel are exactly the. The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs).

Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless tunnel FET with metal-insulator transition material. Field effect transistor structures using germanium nanowires.

Abstract

This research examined the electrical characteristicsof a conventional junctionless silicon-on-insulator (SOI-JL) and aSOI hybrid P/N fin channel JL thin film transistor (SOI-H-JL)using a simulation with gate lengths from 60 nm to 10 nm. Theinterface location of the SOI-H-JL has a depletion region of aparallel channel, which influences the effective thickness of thechannel. The threshold voltage can be adjusted by changing theconcentration of the substrate. Better electrical characteristicsand higher transconductance can be obtained under the shortchannel when compared with the conventional SOI-JL. Althoughthe hybrid structure has better electrical characteristics, thelarger gate capacitance results in the delay time excessively longas a defect, which can be improved by thickening the raisedsource/drain area. The circuit performance is evaluated bybuilding up an inverter using aforementioned devices.

This research examined the electrical characteristicsof a conventional junctionless silicon-on-insulator (SOI-JL) and aSOI hybrid P/N fin channel JL thin film transistor (SOI-H-JL)using a simulation with gate lengths from 60 nm to 10 nm. Theinterface location of the SOI-H-JL has a depletion region of aparallel channel, which influences the effective thickness of thechannel. The threshold voltage can be adjusted by changing theconcentration of the substrate. Better electrical characteristicsand higher transconductance can be obtained under the shortchannel when compared with the conventional SOI-JL. Althoughthe hybrid structure has better electrical characteristics, thelarger gate capacitance results in the delay time excessively longas a defect, which can be improved by thickening the raisedsource/drain area. The circuit performance is evaluated bybuilding up an inverter using aforementioned devices.

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Junctionless Fet

Permalink: http://ieee-dataport.org/documents/investigation-scalability-3d-stacked-hybrid-pn-layer-and-vertical-gate-soi-junctionless

DOI Link: https://dx.doi.org/10.21227/m6xf-3898

Short Link: http://ieee-dataport.org/1082

• 1heterojunction FET

  1) Техника:полевой транзистор с гетеропереходом, полевой транзистор с затвором на гетеропереходе, полевой транзистор с управляющим гетеропереходом

  2) Электроника:полевой транзистор на гетеропереходе

  Универсальный англо-русский словарь >heterojunction FET

• 2heterojunction FET

  English-Russian electronics dictionary >heterojunction FET

• 3heterojunction FET

  The New English-Russian Dictionary of Radio-electronics >heterojunction FET

• 4heterojunction fet

  English-Russian dictionary of electronics >heterojunction fet

• 5heterojunction(-gate) FET

  Англо-русский словарь технических терминов >heterojunction(-gate) FET

• 6heterojunction(-gate) FET

  Англо-русский словарь технических терминов >heterojunction(-gate) FET

• 7heterojunction-gate FET

  1) Техника:полевой транзистор с управляющим гетеропереходом

  2) Электроника:полевой транзистор с затвором на гетеропереходе

  Универсальный англо-русский словарь >heterojunction-gate FET Download remote desktop connection manager windows 10.

• 8heterojunction-gate FET

  English-Russian electronics dictionary >heterojunction-gate FET

• 9heterojunction-gate FET

  The New English-Russian Dictionary of Radio-electronics >heterojunction-gate FET

• 10heterojunction-gate fet

  English-Russian dictionary of electronics >heterojunction-gate fet

Junctionless Tunnel Fet

См. также в других словарях:

Junctionless Tunnel Fet

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