80n70 Mosfet

Buz11 Datasheet
Buz11 Transistor

Today I will show you how to check the old mosfet. Old Mosfet I took from the controller of the old electric bike. You can find it at the electronic landfill. Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. 80NF70 Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd: Part No. 80NF70: Description N-Channel 60 V MOSFET: Download 7 Pages: Scroll/Zoom: 100%: Maker.

Type Designator: 8N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 147 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 115 nS

Drain-Source Capacitance (Cd): 124 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-220TO-220FTO-220F1

8N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

8N70 Datasheet (PDF)

0.1. 8n70.pdf Size:229K _utc

UNISONIC TECHNOLOGIES CO., LTD 8N70 Preliminary Power MOSFET 8A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N70 is an N-channel power MOSFET using UTCs advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON)

0.2. ssh8n70 ssh8n80.pdf Size:272K _semelab

0.3. tsm8n70ci.pdf Size:3733K _taiwansemi

TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)()(max) ID (A) 2. Drain 3. Source 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide sup

0.4. mtn8n70fp.pdf Size:417K _cystek

Spec. No. : C727FP Issued Date : 2009.06.23 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 700V RDS(ON) :1.2(typ.) MTN8N70FP ID : 7.5A Description The MTN8N70FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

0.5. cs8n70f a9h2-g.pdf Size:242K _crhj

Silicon N-Channel Power MOSFET R CS8N70F A9H2-G General Description VDSS 700 V CS8N70F A9H2-G , the silicon N-channel Enhanced ID 8 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Buz11 Datasheet

0.6. hy8n70t.pdf Size:144K _hy

HY8N70T / HY8N70FT 700V / 8A700V, RDS(ON)=1.2W@VGS=10V, ID=4.0AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1

0.7. hfp8n70u.pdf Size:198K _semihow

March 2013BVDSS = 700 VRDS(on) typ = 1.3 HFP8N70U ID = 7.5 A700V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

0.8. hfs8n70s.pdf Size:183K _semihow

Dec 2012BVDSS = 700 VRDS(on) typ HFS8N70SID = 7.0 A700V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lo

0.9. hfd8n70u.pdf Size:201K _semihow

Jan 2014BVDSS = 700 VRDS(on) typ = 1.3 HFD8N70U / HFU8N70U ID = 6.0 A700V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD8N70U HFU8N70U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC

0.10. Update mountain lion. hfs8n70u.pdf Size:307K _semihow

March 2013BVDSS = 700 VRDS(on) typ = 1.3 HFS8N70U ID = 7.5 A700V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

0.11. cs18n70f cs18n70v.pdf Size:410K _convert

nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N70F, CS18N70V700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N70F TO-220F CS18N70FC

0.12. cs8n70f.pdf Size:681K _convert

nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N70F700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N70F TO-220F CS8N70FAbsolute Maxim

Datasheet: 3N70, 3N70A, 3N70K, 4N70, 4N70K, 5N70K, 6N70, 7N70, BSS138, 9N70, 10N70, 12N70, 15N70, 6N65Z, 7N65A, 7N65, 7N65Z.

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This post explains for the semiconductor 80NF70.

The Part Number is 80NF70, STP80NF70.

The function of this semiconductor is 68V, N-channel MOSFET.

The package is TO-220 Type

Manufacturers : ST Microelectronics

See the preview image and the PDF file for more information.

Images :

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1 page

Description :

STP80NF70 N-channel 68 V, 0.0082 Ω , 98 A, TO-220 STripFET™ II Power MOSFET Features Type STP80NF70 ■ VDSS 68 V RDS(on) max < 0.0098 Ω ID 98 A Exceptional dv/dt capability 100% avalanche tested 1 3 2 Application ■ TO-220 Switching applications Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 80NF70 Package TO-220 Packaging Tube Order code STP80NF70 June 2010 Doc ID 17610 Rev 1 1/13 www.st.com 13 www.DataSheet4U.net Contents STP80NF70 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . […]

Buz11 Transistor

80NF70 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 68 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 98 A
4. Drain power dissipation : PD = 190 W
5. Single pulse avalanche energy : Eas = 700 mJ
6. Channel temperature : Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C